High-purity Silicon Carbide (SiC) Ceramic, Toshiba Ceramics Co., Ltd.

Toshiba Ceramics' proprietary high-purity reaction-bonded silicon carbide (RB-SiC) material developed specifically for semiconductor manufacturing equipment. It is designed to offer:

• Very high purity (low metallic contamination)
• High mechanical strength
• Excellent corrosion resistance
• Excellent thermal shock resistance
• Low particle generation
• Stable performance up to approximately 1350°C

Many TPSS components are also available with an ultra-high-purity CVD SiC coating, further reducing particle generation and contamination in advanced wafer processes.